• DocumentCode
    1262963
  • Title

    Through-Oxide-Via-Induced Back-Gate Effect in 3-D Integrated FDSOI Devices

  • Author

    Trivedi, Amit Ranjan ; Mukhopadhyay, Saibal

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    32
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1020
  • Lastpage
    1022
  • Abstract
    This letter studies the interaction of the potential of through-oxide-via (TOV) and the electrical behavior of neighboring transistors in a 3-D stack of fully depleted silicon-on-insulator (FDSOI) devices. Using device simulation, we show that the back-gate electric field of FDSOI devices can be significantly modulated by the potential of TOVs placed in close proximity. Consequently, the change in the TOV potential results in appreciable variation in the threshold voltage and the leakage current of neighboring FDSOI devices.
  • Keywords
    leakage currents; silicon-on-insulator; three-dimensional integrated circuits; 3D integrated FDSOI devices; fully depleted silicon-on-insulator devices; leakage current; threshold voltage; through-oxide-via-induced back-gate effect; Electric potential; FETs; IEEE Potentials; Logic gates; Silicon; Subthreshold current; 3-D integration; Fully depleted silicon-on-insulator (FDSOI); through-oxide via (TOV);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2156380
  • Filename
    5936664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1262963