Title :
Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit
Author :
Ren, Jingjian ; Li, Bei ; Zheng, Jian-Guo ; Olmedo, Mario ; Zhou, Huimei ; Shi, Yi ; Liu, Jianlin
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Abstract :
A nonplanar Flash memory architecture with ultrahigh-density (~1.5 × 1012 cm-2) NiSi nanocrystals (NCs) as the floating gate is demonstrated using a triangular-shaped Si nanowire array as the memory transistor channel. The memory device shows good programming, erasing, and retention characteristics. This result suggests that nonplanar devices can extend NC memory scaling limit.
Keywords :
elemental semiconductors; flash memories; memory architecture; nanoelectronics; nanowires; nickel compounds; silicon; NC memory scaling limit; NiSi; Si; memory device; memory transistor channel; nanocrystal memory scaling limit; nonplanar devices; nonplanar flash memory architecture; nonplanar nanocrystal floating-gate memory; triangular-shaped silicon nanowire array; Computer architecture; Logic gates; Microprocessors; Nanocrystals; Nonvolatile memory; Performance evaluation; Silicon; Anisotropic etching; Flash memory; nanocrystal (NC); nonplanar;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2206554
