DocumentCode :
1263653
Title :
Process and Reliability Sensors for Nanoscale CMOS
Author :
Keane, J.P. ; Kim, Chul Han ; Qunzeng Liu ; Sapatnekar, Sachin S.
Volume :
29
Issue :
5
fYear :
2012
Firstpage :
8
Lastpage :
17
Abstract :
This paper describes the use of sensing schemes that drive on-chip process and aging variation measurements in manufactured silicon.
Keywords :
CMOS integrated circuits; integrated circuit manufacture; integrated circuit reliability; nanotechnology; aging variation measurement; nanoscale CMOS; on-chip process; process sensor; reliability sensor; Aging; Frequency measurement; Odometers; Path planning; Sensor phenomena and characterization; Stress analysis; Temperature measurement; Bias Temperature Instability; Critical Paths; Reliability; Sensors; Silicon odometer; Variations;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/MDT.2012.2211561
Filename :
6266774
Link To Document :
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