Title :
Plasma-assisted InP-to-Si low temperature wafer bonding
Author :
Pasquariello, Donato ; Hjort, Klas
Author_Institution :
Dept. of Mater. Sci., Uppsala Univ., Sweden
Abstract :
The applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InP-based optoelectronic devices on Si. From there, the lowering of annealing temperature in wafer bonding by plasma-assisted bonding is the essence of this review paper. Lower annealing temperatures would further launch wafer bonding as a competitive technology and enable a wider use of it. Oxygen plasma treatment has been proven to be very feasible in achieving a strong bonding already at low temperatures. It was also seen that in our experimental setups the results depended on what plasma parameters that were used, since different plasma parameters create different surface conditions
Keywords :
III-V semiconductors; annealing; indium compounds; optical fabrication; optoelectronic devices; silicon; sputter etching; wafer bonding; InP-Si; InP-based optoelectronic devices; annealing temperature; annealing temperatures; competitive technology; dissimilar material system; oxygen plasma treatment; plasma parameters surface conditions; plasma-assisted InP-to-Si low temperature wafer bonding; plasma-assisted bonding; review; strong bonding; Lattices; Optical materials; Plasma applications; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Semiconductor materials; Silicon; Wafer bonding;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.991407
