Title :
High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN Heterostructure
Author :
Lee, Jae-Hoon ; Lee, Jung-Hee
Author_Institution :
GaN Power Res. Group, Samsung LED Co., Ltd., Suwon, South Korea
Abstract :
We demonstrate high-performance InGaN-based light-emitting diodes (LEDs) with tunneling-junction-induced 2-D electron gas (2-DEG) at n-AlGaN/GaN heterostructure, inserted in the middle of the p++-GaN contact layer of a conventional LED structure. The LED with a 2-DEG layer exhibits about 20% enhancement in output power, as compared with that of the conventional LED at 350 mA, which is believed to be due to enhanced hole-injection efficiency and better lateral current spreading by the presence of 2-DEG at the AlGaN/GaN heterostructure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; tunnel diodes; two-dimensional electron gas; wide band gap semiconductors; 2-DEG; AlGaN-GaN; InGaN; current 350 mA; high-performance light-emitting diodes; high-power LED; tunneling-junction-induced 2D electron gas; tunneling-junction-induced two-dimensional electron gas; Aluminum gallium nitride; Electrostatic discharge; Gallium nitride; Junctions; Light emitting diodes; Power generation; Tunneling; 2-D electron gas (2-DEG); AlGaN/GaN; InGaN; heterostructure; light-emitting diode (LED); tunneling junction;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2159119
