Integration of Solar Cells on Top of CMOS Chips—Part II: CIGS Solar Cells

Author

Jiwu Lu ; Liu, Wei ; Kovalgin, A.Y. ; Sun, Yun ; Schmitz, Jurriaan

Author_Institution

Univ. of Twente, Enschede, Netherlands

Volume

58

Issue

8

fYear

2011

Firstpage

2620

Lastpage

2627

Abstract

We present the monolithic integration of deep-submicrometer complementary metal-oxide-semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance, and the solar cells on top show an efficiency of 8.4 ± 0.8% and a yield of 84%, both values being close to the glass reference. The main integration issues, i.e., adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress, can be resolved while maintaining standard photovoltaic processing. A tight process window is found for the manufacturing of CIGS solar cells on the CMOS side of the microchip. More process margin exists for backside integration.

Keywords

CMOS integrated circuits; copper compounds; gallium compounds; indium compounds; solar cells; surface topography; ternary semiconductors; CIGS solar cell; CMOS chip; Cu(InGa)Se₂; deep submicrometer complementary metal-oxide-semiconductor microchip; electronic performance; glass reference; mechanical stress; metal ion contamination; photovoltaic processing; process temperature; solar cell integration; surface topography; Adhesives; CMOS integrated circuits; Glass; Photovoltaic cells; Substrates; Surface topography; Complementary metal–oxide–semiconductor (CMOS); copper indium gallium selenide (CIGS); energy harvesting; monolithic integration; photovoltaic (PV) cells; scavenging; smart dust; solar cells;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2156799

Filename

5937048