Design Optimization for High-Performance Self-Assembled Quantum Dot Lasers With Fabry–Perot Cavity

Author

Deng, Lanxin ; Han, Lin ; Xi, Yanping ; Li, Xun ; Huang, Wei-Ping

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada

Volume

4

Issue

5

fYear

2012

Firstpage

1600

Lastpage

1609

Abstract

An optimization guideline is proposed for designing of the single longitudinal-mode Fabry-Perot (FP) laser based on the self-assembled InGaAs/GaAs quantum dots (QD). With the optimal values of the inhomogeneous and homogeneous gain-broadening parameters, a design example is simulated and analyzed. It shows that a side-mode suppression ratio (SMSR) over 40 dB and a 3-dB bandwidth of 17 GHz for the small-signal modulation response are obtained. The quantitative conditions for the performance feasibility are examined with respect to the gain broadening parameters.

Keywords

Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical design techniques; optical modulation; quantum dot lasers; self-assembly; spectral line broadening; FP laser; Fabry-Perot cavity; InGaAs-GaAs; QD; SMSR; bandwidth 17 GHz; design optimization; high-performance self-assembled quantum dot lasers; homogeneous gain-broadening parameters; inhomogeneous gain-broadening parameters; self-assembled quantum dots; side-mode suppression ratio; single longitudinal-mode Fabry-Perot laser; small-signal modulation response; Cavity resonators; Fabry-Perot; Laser modes; Nonhomogeneous media; Quantum dot lasers; Quantum dots; Diode lasers; quantum dots (QDs); semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2012.2211003

Filename

6268286