Title :
Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel
Author :
Liu, Li-Jung ; Chang-Liao, Kuei-Shu ; Jian, Yi-Chuen ; Cheng, Jen-Wei ; Wang, Tien-Ko ; Tsai, Ming-Jinn
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The operation characteristics of p-channel TaN/ Al2O3/HfO2/HfAlO2/SiO2/Si MAHOS-type nonvolatile memory devices with different Ge contents in a SiGe buried channel are investigated in this letter. Compared with those of a device having a conventional Si-channel, both programming and erasing speeds are significantly improved by employing a Si0.7Ge0.3 buried channel. Satisfactory retention and excellent endurance characteristics up to 106 P/E cycles with 4.1-V memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced.
Keywords :
Ge-Si alloys; aluminium compounds; hafnium compounds; integrated circuit reliability; phase change memories; MAHOS-type nonvolatile memory devices; P-channel charge-trapping flash memory device; SiGe; TaN-Al2O3-HfO2-HfAlO2-SiO2-Si; buried channel; enhanced programming; erasing speeds; voltage 4.1 V; Electron devices; Flash memory; Logic gates; Nonvolatile memory; Programming; Silicon; Silicon germanium; Atomic layer deposition (ALD); SiGe buried channel; charge-trapping Flash memory; high-$kappa$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2206069
