• DocumentCode
    1264504
  • Title

    Ultrafast Gain and Refractive Index Dynamics in AlInAs/AlGaAs Quantum Dot Based Semiconductor Optical Amplifiers Operating at 800 nm

  • Author

    Pulka, Jaroslaw ; Piwonski, Tomasz ; Huyet, Guillaume ; Houlihan, John ; Barbay, Sylvain ; Martinez, Anthony ; Merghem, Kamel ; Lemaître, Aristide ; Ramdane, Abderrahim ; Kuszelewicz, Robert

  • Author_Institution
    Tyndall Nat. Inst., Cork, Ireland
  • Volume
    47
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1094
  • Lastpage
    1100
  • Abstract
    The ultrafast gain and refractive index dynamics in AlInAs/AlGaAs quantum dot (QD) based semiconductor optical amplifiers is reported. Measurements in the forward bias regime indicate a complete gain recovery timescale of ~ 5 ps , while the phase dynamics occur over a much longer timescale. At increased pump powers, the impact of nonresonant carriers created by two-photon absorption is visible as an increased injection in both gain and phase dynamics. Reverse-biased measurements reveal a similar behavior to previous measurements on InAs QD devices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical pumping; quantum dot lasers; refractive index; semiconductor optical amplifiers; semiconductor quantum dots; two-photon spectra; AlInAs-AlGaAs; forward bias regime; nonresonant carriers; phase dynamics; pump power; quantum dot; refractive index dynamics; reverse biased measurements; semiconductor optical amplifiers; two-photon absorption; ultrafast gain dynamics; Absorption; Delay; Gain; Optical waveguides; Quantum dot lasers; Semiconductor device measurement; Transient analysis; Optical amplifiers; optical materials; semiconductor device measurements;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2011.2155034
  • Filename
    5937456