Title :
Low-threshold lasing from high-density InAs quantum dots of uniform size
Author :
Saito, H. ; Nishi, K. ; Sugimoto, Y. ; Sugou, S.
Author_Institution :
Optoelectron. & High Frequency Device Labs., NEC Corp., Ibaraki, Japan
fDate :
9/2/1999 12:00:00 AM
Abstract :
To construct the active region of a Fabry-Perot laser, high-density InAs quantum dots having a narrow photoluminescence linewidth of ~30 meV have been formed. A very low threshold current density of 76 A/cm2 was achieved at room temperature due to the high gain with narrow linewidth at the ground state of the quantum dots
Keywords :
III-V semiconductors; indium compounds; photoluminescence; quantum well lasers; semiconductor quantum dots; Fabry-Perot laser; InAs; InAs quantum dot; gain; ground state; photoluminescence linewidth; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991077
