DocumentCode
1264792
Title
Low-threshold lasing from high-density InAs quantum dots of uniform size
Author
Saito, H. ; Nishi, K. ; Sugimoto, Y. ; Sugou, S.
Author_Institution
Optoelectron. & High Frequency Device Labs., NEC Corp., Ibaraki, Japan
Volume
35
Issue
18
fYear
1999
fDate
9/2/1999 12:00:00 AM
Firstpage
1561
Lastpage
1563
Abstract
To construct the active region of a Fabry-Perot laser, high-density InAs quantum dots having a narrow photoluminescence linewidth of ~30 meV have been formed. A very low threshold current density of 76 A/cm2 was achieved at room temperature due to the high gain with narrow linewidth at the ground state of the quantum dots
Keywords
III-V semiconductors; indium compounds; photoluminescence; quantum well lasers; semiconductor quantum dots; Fabry-Perot laser; InAs; InAs quantum dot; gain; ground state; photoluminescence linewidth; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991077
Filename
802801
Link To Document