• DocumentCode
    1264803
  • Title

    Realisation of highly efficient 850 nm top emitting resonant cavity light emitting diodes

  • Author

    Bockstaele, R. ; Derluyn, J. ; Sys, C. ; Verstuyft, S. ; Moerman, I. ; Van Daele, P. ; Baets, R.

  • Author_Institution
    Dept. of Inf. Technol., Ghent Univ., Belgium
  • Volume
    35
  • Issue
    18
  • fYear
    1999
  • fDate
    9/2/1999 12:00:00 AM
  • Firstpage
    1564
  • Lastpage
    1565
  • Abstract
    Highly efficient top emitting 850 nm resonant cavity LEDs (RCLEDs) with and without selectively oxidised current windows have been realised and compared. The oxidised RCLEDs have an increased efficiency, due to a larger carrier injection efficiency. The best devices show a 14% overall quantum efficiency, and a voltage drop of 1.8 V at 3 mA drive current
  • Keywords
    light emitting diodes; optical resonators; 14 percent; 850 nm; carrier injection efficiency; quantum efficiency; selectively oxidised current window; top emitting resonant cavity light emitting diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991052
  • Filename
    802803