Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base

Author

Dasgupta, Sansaptak ; Nidhi, Nidhi ; Raman, Ajay ; Speck, James S. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

32

Issue

9

fYear

2011

Firstpage

1212

Lastpage

1214

Abstract

In this letter, we demonstrate for the first time a III-nitride hot-electron transistor using an AlGaN (24%) emitter, 10-nm GaN base, and an AlGaN (8%) collector. Individual isotype heterojunctions were characterized by I- V measurements. For the device biased in a common base configuration, a common base transfer ratio of 0.97-0.98 was measured. The hot-electron distribution was obtained by plotting the differential of the collector current with respect to the applied base-collector voltage and demonstrated a Maxwellian shape suggesting near-ballistic transport through the 10-nm base.

Keywords

III-V semiconductors; aluminium compounds; electric current measurement; gallium compounds; hot electron transistors; voltage measurement; AlGaN; I-V measurements; Maxwellian shape; base-collector voltage; collector current; hot-electron transistor; near-ballistic transport; size 10 nm; Current measurement; Gallium nitride; Heterojunctions; Resistance; Scattering; Temperature measurement; Transistors; GaN; hot-electron spectroscopy; hot-electron transistors (HETs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2158980

Filename

5940204