Correlated Flicker Noise and Hole Mobility Characteristics of $(\hbox {110})/\langle \hbox {110}\rangle$ Uniaxially Strained SiGe FINFETs

Hole mobility and flicker noise characteristics of uniaxially strained ( 110)/〈110〉 Si_0.75 Ge_0.25 pFINFETs (SSGOI_0.25) are investigated in this letter. Equivalent gate referred flicker noise in SSGOI_0.25 is dominated by correlated number and mobility fluctuation in the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in SSGOI_0.25 and in Si pFINFETs is 10^-5 and 10^-4, respectively. The lower value of the Hooge parameter in SSGOI_0.25 pFINFETs is attributed to improved phonon-limited mobility compared to the SOI pFINFETs. SSGOI_0.25 FINFETs are found to exhibit the lowest equivalent gate referred flicker noise among any nonplanar devices reported to date.