Title :
A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
Author :
Shrivastava, Mayank ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution :
Intel Mobile Commun. Gmbh, Munich, Germany
Abstract :
A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2 × better RON versus VBD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.
Keywords :
MOSFET; electronic design automation; high-speed techniques; high-voltage techniques; optimisation; conventional device option; drain-extended FinFET device design; high-voltage high-speed applications; optimization guideline; technology computer-aided design simulations; CMOS integrated circuits; FinFETs; Logic gates; Optimization; P-n junctions; Performance evaluation; System-on-a-chip; Drain extended; FinFET; high voltage (HV); system-on-a-chip (SoC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2206791
