• DocumentCode
    1264990
  • Title

    Simulation of soft recovery in Si pin rectifiers with ultra-shallow p+ emitters

  • Author

    Kub, F.J. ; Ancona, M.G. ; Hobart, K.D.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    35
  • Issue
    18
  • fYear
    1999
  • fDate
    9/2/1999 12:00:00 AM
  • Firstpage
    1591
  • Lastpage
    1592
  • Abstract
    Ultra-shallow (<500 Å) p+-emitters in Si pin rectifiers are shown via numerical simulation to reduce the need for lifetime killing in order to obtain soft recovery. This benefit is especially pronounced at elevated operating temperatures
  • Keywords
    elemental semiconductors; silicon; solid-state rectifiers; Si; Si pin rectifier; elevated temperature; lifetime killing; numerical simulation; soft recovery; ultra-shallow p+ emitter;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991087
  • Filename
    802840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1264990