Room-temperature operation of VCSEL-pumped photonic crystal lasers

Author

Po-Tsung Lee ; Cao, J.R. ; Sang-Jun Choi ; Zhi-Jian Wei ; O´Brien, J.D. ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Engineering-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

14

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

435

Lastpage

437

Abstract

Room-temperature operation of two-dimensional photonic crystal lasers optically pumped by a vertical-cavity surface-emitting laser emitting at 860 nm is reported. The photonic crystal membrane is surrounded by air on both sides and consists of four compressively strained quantum wells as the active region. The incident threshold pump power of an approximately 2.6-μm-diameter hexagonal defect cavity laser operating at 1.6 μm is 2.4 mW.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; microcavity lasers; optical pumping; photonic band gap; quantum well lasers; 1.6 micron; 2.4 mW; 2.6 micron; 2D photonic crystal lasers; 860 nm; InGaAsP-InP; VCSEL-pumped photonic crystal lasers; active region; compressively strained quantum wells; hexagonal defect cavity laser; incident threshold pump power; optically pumped; photonic crystal membrane; room-temperature operation; two-dimensional photonic crystal lasers; vertical-cavity surface-emitting laser; Biomembranes; Laser excitation; Optical pumping; Photonic crystals; Power lasers; Pump lasers; Quantum well lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.992569

Filename

992569