900-mW high brightness buried ridge lasers by selective area epitaxy

Author

Swint, R.B. ; Huber, A.E. ; Yeoh, T.S. ; Woo, C.Y. ; Coleman, J.J. ; Faircloth, B.O. ; Zediker, M.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

14

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

441

Lastpage

443

Abstract

A study has been made of high power single lateral mode buried ridge lasers fabricated by selective area epitaxy. Several ridge thicknesses have been evaluated simultaneously in a single fabrication run. These lasers operate purely in the fundamental mode to output powers in excess of 450 mW, after which they are subject to beam steering or higher order mode operation. For weakly guided lasers, the output remains in a narrow lobe [full-width at half-maximum (FWHM)] = 4/spl deg/-6/spl deg/, stable at a given current value, up to output powers of 900 mW in CW tests.

Keywords

III-V semiconductors; MOCVD; brightness; gallium arsenide; indium compounds; laser modes; optical fabrication; quantum well lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; 450 mW; 900 mW; CW tests; InGaAs; beam steering; fundamental mode; high brightness buried ridge lasers; high power single lateral mode buried ridge lasers; higher order mode operation; narrow lobe; output powers; ridge thicknesses; selective area epitaxy; single fabrication run; weakly guided lasers; Biomedical optical imaging; Brightness; Epitaxial growth; Lab-on-a-chip; Laser modes; Optical design; Optical pumping; Power lasers; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.992571

Filename

992571