Title :
Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
Author :
Tansu, N. ; Mawst, L.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
4/1/2002 12:00:00 AM
Abstract :
Highly strained (/spl Delta/a/a /spl sim/ 2.5%) In/sub 0.4/Ga/sub 0.6/As and In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/-quantum-well (QW) active lasers utilizing strain-compensating InGaP-GaAsP buffer layers and GaAs/sub 0.85/P/sub 0.15/ barrier layers, grown by metal-organic chemical vapor deposition (MOCVD), are demonstrated with lasing emission wavelength of 1.185 and 1.307 μm, respectively. Threshold and transparency current density for the strain compensated InGaAsN QW lasers, with emission wavelength of 1.295 μm, are measured to be as low as 290 A/cm2 (L = 1500 μm) and 110 A/cm2, respectively, with characteristic temperature of T0 and T1 of 130 K and 400 K.
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.185 micron; 1.19 to 1.31 micron; 1.307 micron; 130 K; 400 K; GaAs/sub 0.85/P/sub 0.15/; GaAs/sub 0.85/P/sub 0.15/ barrier layers; In/sub 0.4/Ga/sub 0.6/As; In/sub 0.4/Ga/sub 0.6/As QW lasers; In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/; In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/ quantum-well active lasers; InGaAsN; InGaP-GaAsP; MOCVD; characteristic temperature; emission wavelength; lasing emission wavelength; low-threshold strain-compensated InGaAsN quantum-well lasers; metal-organic chemical vapor deposition; semiconductor lasers; strain compensated InGaAsN QW lasers; strain-compensating InGaP-GaAsP buffer layers; transparency current density; Buffer layers; Chemical lasers; Chemical vapor deposition; Current density; Current measurement; Density measurement; Gallium arsenide; MOCVD; Strain measurement; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
