Inclusion of the Accumulation Region in the Compact Models of Bulk and SOI FinFETs

Author

Dessai, Gajanan ; Gildenblat, Gennady

Author_Institution

Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA

Volume

58

Issue

8

fYear

2011

Firstpage

2644

Lastpage

2651

Abstract

TCAD simulations show the difference in the transient behavior and the capacitance-voltage characteristics of bulk and SOI FinFETs if the gate-voltage swing includes the accumulation region. This effect can be captured by a compact model of FinFETs only if it includes the contribution of both types of carriers in the Poisson-Boltzmann equation. An accurate implicit input-voltage equation valid in all regions of operation is proposed for double-gate FinFETs with intrinsic or lightly doped bodies. This results in a surface-potential-based compact model of FinFETs, which is valid in all regions of operation and is verified by comparison with TCAD simulations.

Keywords

Boltzmann equation; MOSFET; Poisson equation; accumulation layers; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; surface potential; technology CAD (electronics); Poisson-Boltzmann equation; SOI FinFET; Si; TCAD simulation; accumulation region inclusion; bulk FinFET; capacitance-voltage characteristic; gate-voltage swing; input-voltage equation; surface-potential-based compact model; Approximation methods; Capacitance; Charge carrier processes; Equations; FinFETs; Logic gates; Mathematical model; Compact model; fin-shaped field-effect-transistor (FinFET) capacitances; surface potential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2157925

Filename

5940999