Title :
Inclusion of the Accumulation Region in the Compact Models of Bulk and SOI FinFETs
Author :
Dessai, Gajanan ; Gildenblat, Gennady
Author_Institution :
Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
TCAD simulations show the difference in the transient behavior and the capacitance-voltage characteristics of bulk and SOI FinFETs if the gate-voltage swing includes the accumulation region. This effect can be captured by a compact model of FinFETs only if it includes the contribution of both types of carriers in the Poisson-Boltzmann equation. An accurate implicit input-voltage equation valid in all regions of operation is proposed for double-gate FinFETs with intrinsic or lightly doped bodies. This results in a surface-potential-based compact model of FinFETs, which is valid in all regions of operation and is verified by comparison with TCAD simulations.
Keywords :
Boltzmann equation; MOSFET; Poisson equation; accumulation layers; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; surface potential; technology CAD (electronics); Poisson-Boltzmann equation; SOI FinFET; Si; TCAD simulation; accumulation region inclusion; bulk FinFET; capacitance-voltage characteristic; gate-voltage swing; input-voltage equation; surface-potential-based compact model; Approximation methods; Capacitance; Charge carrier processes; Equations; FinFETs; Logic gates; Mathematical model; Compact model; fin-shaped field-effect-transistor (FinFET) capacitances; surface potential;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2157925
