High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

Author

Emsley, Matthew K. ; Dosunmu, Olufemi ; Ünlü, M. Selim

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

14

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

519

Lastpage

521

Abstract

We report a resonant-cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90% reflecting surface. The resonant-cavity-enhanced Si photodetectors have 40% quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications.

Keywords

dark conductivity; elemental semiconductors; high-speed optical techniques; infrared detectors; integrated optoelectronics; mirrors; optical communication equipment; optical resonators; photodetectors; silicon; silicon-on-insulator; substrates; 10 Gbit/s; 10-Gb/s data communications; 29 ps; 860 nm; DBR; Si; buried DBR; double-SOI process; high-speed resonant-cavity-enhanced silicon photodetectors; quantum efficiency; reflecting silicon-on-insulator substrates; reflecting surface; resonant-cavity-enhanced Si photodetector; response time; two period distributed Bragg reflector; Absorption; Distributed Bragg reflectors; High speed optical techniques; Mirrors; Molecular beam epitaxial growth; Optical refraction; Photodetectors; Resonance; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.992597

Filename

992597