Strong Purcell effect for InAs quantum boxes in three-dimensional solid-state microcavities

Author

Gérard, Jean-Michel ; Gayral, Bruno

Author_Institution

France Telecom, CNET, Bagneux, France

Volume

17

Issue

11

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

2089

Lastpage

2095

Abstract

A strong enhancement of the spontaneous emission rate (Purcell effect) has been observed for self-assembled InAs/GaAs quantum boxes inserted in GaAs-based pillar microcavities (×5) and microdisks (×15) using time-resolved as well as c.w. photoluminescence experiments. We show that the magnitude of the Purcell effect can be quantitatively understood by considering both the Purcell figure of merit F_p of such cavities (F_p≫1) and the spatial/spectral distribution of the inhomogeneous collection of atom-like emitters. These results open the way to the development of single-photon devices such as photon-guns or photon-turnstiles, able to emit photons one-by-one in a deterministic way

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; spontaneous emission; time resolved spectra; CW photoluminescence; GaAs-based pillar microcavities; InAs quantum boxes; InAs-GaAs; Purcell figure of merit; microdisks; photon-guns; photon-turnstiles; self-assembled InAs/GaAs quantum boxes; single-photon devices; spatial/spectral distribution; spontaneous emission rate; strong Purcell effect; three-dimensional solid-state microcavities; time-resolved photoluminescence; Electrodynamics; Gallium arsenide; Microcavities; Optical coupling; Photoluminescence; Quantum dots; Quantum mechanics; Radiative recombination; Solid state circuits; Spontaneous emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.802999

Filename

802999