DocumentCode :
1265682
Title :
One-dimensional photonic bandgap microcavities for strong optical confinement in GaAs and GaAs/AlxOy semiconductor waveguides
Author :
Ripin, Daniel J. ; Lim, Kuo-Yi ; Petrich, G.S. ; Villeneuve, Pierre R. ; Fan, Shanhui ; Thoen, E.R. ; Joannopoulos, John D. ; Ippen, E.P. ; Kolodziejski, L.A.
Author_Institution :
Center for Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Volume :
17
Issue :
11
fYear :
1999
fDate :
11/1/1999 12:00:00 AM
Firstpage :
2152
Lastpage :
2160
Abstract :
Photonic bandgap (PBG) waveguide microcavities with tightly confined resonant optical modes have been designed, fabricated using high-dielectric-contrast GaAs/AlxOy III-V compound semiconductor structures, and characterized optically. The photonic crystal lattices are defined by one-dimensional (1-D) arrays of holes in waveguides, and a controlled defect in the spacing between two holes of an array defines a microcavity. Waveguide microcavity resonances have been studied in both monorail and suspended air-bridge geometries. Resonance states with cavity Q´s as high as 360 were measured at wavelengths near 1.55 μm, with modal volumes as small as 0.026 μm, which corresponds to only two times (λ/2n)3
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical planar waveguides; photonic band gap; semiconductor-insulator boundaries; 1.55 mum; GaAs; GaAs-AlO; GaAs/AlxOy semiconductor waveguides; controlled defect; high-dielectric-contrast GaAs/AlxOy III-V compound semiconductor structures; modal volumes; monorail geometry; one-dimensional photonic bandgap microcavities; resonance states; strong optical confinement; suspended air-bridge geometries; tightly confined resonant optical modes; Gallium arsenide; III-V semiconductor materials; Lattices; Microcavities; Optical design; Optical waveguides; Photonic band gap; Photonic crystals; Resonance; Semiconductor waveguides;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.803006
Filename :
803006
Link To Document :
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