Title :
High temperature 10 Gbit/s directly modulated 1.3 /spl mu/m DFB lasers using InAsP/InGaAsP materials
Author :
Gauthier-Lafaye, O. ; Colson, V. ; Py, J. ; Thedrez, B. ; Gentner, J.-L.
Author_Institution :
Alcatel Optoplus, Marcoussis, France
fDate :
3/14/2002 12:00:00 AM
Abstract :
Uncooled 10 Gbit/s direct modulation of high-power 1.3 /spl mu/m InAsP/InGaAsP directly modulated multiple quantum well distributed feedback (DFB) lasers is demonstrated. High resonant frequencies and high efficiency at 85/spl deg/C are obtained due to the high epitaxial quality of ternary, aluminium-free, quantum wells. Floor-free transmission on 90 and 140 ps/nm within ITU recommendations are demonstrated.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; high-temperature electronics; indium compounds; laser transitions; optical modulation; optical transmitters; quantum well lasers; 1.3 micron; 10 Gbit/s; 85 C; ITU recommendations; InAsP-InGaAsP; floor-free transmission; high efficiency; high epitaxial quality; high resonant frequencies; high temperature; high-power 1.3 /spl mu/m InAsP/lnGaAsP directly modulated MQW DFB lasers; multiple quantum well distributed feedback lasers; ternary aluminium-free quantum wells; uncooled 10 Gbit/s direct modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020189
