Title :
Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers
Author :
Ha, W. ; Gambin, V. ; Wistey, M. ; Bank, S. ; Yuen, H. ; Kim, S. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
fDate :
3/14/2002 12:00:00 AM
Abstract :
The high demand for 1.3-1.55 μm lasers has led to the investigation of GaInNAsSb/GaNAsSb on GaAs. In-plane lasers operating out to 1.49 μm, with threshold current density of 930 A/cm2 per quantum well and pulsed power up to 70 mW, are presented. In addition, photoluminescence out to 1.6 μm from GaInNAsSb quantum wells was observed
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; photoluminescence; quantum well lasers; 1.3 to 1.55 micron; 1.49 micron; 1.6 micron; 70 mW; GaAs; GaInNAsSb-GaNAsSb; in-plane lasers; long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers; photoluminescence; pulsed power; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020207
