Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

Author

Huang, Jheng-Jie ; Chang, Ting-Chang ; Yang, Jyun-Bao ; Chen, Shih-Ching ; Yang, Po-Chun ; Chen, Yu-Ting ; Tseng, Hsueh-Chih ; Sze, Simon M. ; Chu, Ann-Kuo ; Tsai, Ming-Jinn

Author_Institution

Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

33

Issue

10

fYear

2012

Firstpage

1387

Lastpage

1389

Abstract

In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.

Keywords

gallium compounds; platinum; random-access storage; titanium compounds; I-V sweeping; Pt-GaO-TiN; bipolar resistance switching characteristic; bistable resistance ratio; gallium oxide layer; oxygen concentration; oxygen ion quantity; resistance random access memory; set voltage distribution statistics; Argon; Electrodes; Gallium; Random access memory; Resistance; Switches; Tin; Gallium oxide; nonvolatile resistance switching memory; resistance random access memory (RRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2206365

Filename

6269918