DocumentCode :
1265919
Title :
Laser-induced transient photoconductivity in MQW systems
Author :
Ridley, B.K. ; Bishop, P.J.
Author_Institution :
Dept. of Phys., Essex Univ., Colchester, UK
Volume :
138
Issue :
5
fYear :
1991
fDate :
10/1/1991 12:00:00 AM
Firstpage :
294
Lastpage :
298
Abstract :
In the interpretation of laser-induced transient photoconductivity a number of effects have to be take into account. The most important of these are considered to be those associated with excitons, degeneracy, photon recycling, mobility variations and the nonuniformity of carrier injection. These effects are discussed and modifications are made, by including the boson character of the exciton and its four-fold spin degeneracy, to the theory of radiative recombination. A simple estimate to the effect of photon recycling in thin MQWs is given. The density dependence of mobility in an electron-hole plasma is argued to be small, except when higher subbands become populated or the quantum wells become full. In the latter case saturation of the photoconductivity, which can occur at low laser intensities with nonuniform injection, is expected. The importance of both the exponential decay in the degenerate regime and the observed intensity dependence of the initial amplitude is emphasised
Keywords :
carrier mobility; excitons; laser beam effects; photoconducting materials; semiconductor quantum wells; MQW systems; boson character; carrier injection nonuniformity; degeneracy; degenerate regime; electron-hole plasma; excitons; exponential decay; four-fold spin degeneracy; initial amplitude; laser-induced transient photoconductivity; low laser intensities; mobility variations; photon recycling; radiative recombination; saturated photoconductivity; thin MQWs;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
Filename :
99277
Link To Document :
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