DocumentCode :
1266022
Title :
Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra
Author :
Hofstetter, Daniel ; Faist, Jérôme
Author_Institution :
Inst. de Phys., Neuchatel Univ., Switzerland
Volume :
11
Issue :
11
fYear :
1999
Firstpage :
1372
Lastpage :
1374
Abstract :
A new technique for the measurement of semiconductor laser gain and dispersion spectra is presented. The technique is based on an analysis of the subthreshold emission spectrum by Fourier transforms. Applications of this method to AlGaInP-based interband laser diodes and mid-infrared intersubband quantum cascade lasers are discussed. A good agreement between the measured dispersion of the refractive index and tabulated values in the literature was found.
Keywords :
Fourier transform optics; III-V semiconductors; aluminium compounds; dispersion relations; gallium compounds; indium compounds; infrared sources; infrared spectra; quantum well lasers; AlGaInP; AlGaInP-based interband laser diodes; Fourier transforms; dispersion curves; dispersion spectra; emission spectra; mid-infrared intersubband quantum cascade lasers; refractive index dispersion; semiconductor laser gain measurement; subthreshold emission spectrum; tabulated values; Diode lasers; Dispersion; Fourier transforms; Gain measurement; Quantum cascade lasers; Refractive index; Resonance; Semiconductor lasers; Spontaneous emission;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.803049
Filename :
803049
Link To Document :
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