DocumentCode :
1266036
Title :
Influence of the confinement factor on the wavelength-dependent output properties of a tapered traveling-wave semiconductor amplifier
Author :
Gahl, A. ; Balle, S.
Author_Institution :
Dept. de Fisica Interdisciplinar, MIEDEA, Palma de Mallorca, Spain
Volume :
11
Issue :
11
fYear :
1999
Firstpage :
1375
Lastpage :
1377
Abstract :
We analyze the influence of the confinement factor on the output properties of a tapered traveling-wave semiconductor amplifier as a function of the wavelength of the input field and current injected into the amplifier. The interaction of the optical field with the amplifying medium is described by means of a susceptibility function taking into account both the gain and the carrier-induced antiguiding effect, while the beam propagation method is used to describe the evolution of the field along the amplifier. We find that, for the same input power, devices with lower optical confinement factors allow for the same output optical power with better beam quality and higher saturation power than devices with higher optical confinement factor, in agreement with the available experimental results.
Keywords :
laser beams; laser theory; nonlinear optical susceptibility; optical saturation; quantum well lasers; semiconductor device models; semiconductor optical amplifiers; beam propagation method; beam quality; confinement factor; current injection; higher optical confinement factor; higher saturation power; input field; input power; optical confinement factors; output optical power; output properties; tapered traveling-wave semiconductor amplifier; wavelength-dependent output properties; Fiber lasers; Geometrical optics; Laser beams; Optical devices; Optical pumping; Optical saturation; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.803050
Filename :
803050
Link To Document :
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