Design and fabrication of packaged InP/InGaAsP multiple quantum well waveguide components with very low insertion loss

Author

Lynch, T.G. ; MacBean, M.D.A. ; Walling, R.H. ; Thurlow, A.R.

Author_Institution

British Telecom Labs., Ipswich, UK

Volume

138

Issue

5

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

319

Lastpage

322

Abstract

The design of a multiple quantum well (MQW) waveguide with low fibre-to-fibre loss, suitable for optoelectronic device integration, is described. The devices were grown by atmospheric pressure MOVPE and designed to be matched to standard, lensed optical fibre. Measured propagation loss was (0.75±0.1) dB cm^-1 with a fibre-to-fibre loss of (2.6±0.1) dB. Analysis shows that the coupling loss due to mode mismatch was less than (0.52±0.14) dB/facet, believed to be the lowest reported coupling loss to a semiconductor waveguide using lensed fibre. A device packaged using laser welding to fix the fibres had a total insertion loss of (3.9±0.1) dB giving less than 1.3 dB excess loss due to the packaging process

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical losses; optical waveguide components; packaging; semiconductor quantum wells; 3.9 dB; InP-InGaAsP; MQW; atmospheric pressure MOVPE; coupling loss; laser welding; lensed optical fibre; low fibre-to-fibre loss; mode mismatch; multiple quantum well waveguide components; optoelectronic device integration; packaged; propagation loss; semiconductor waveguide; total insertion loss; very low insertion loss;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

99282