Add-on Cu/SiLK/sup TM/ module for high Q inductors

Author

Jenei, Snezana ; Decoutere, Stefaan ; Maex, Karen ; Nauwelaers, Bart

Author_Institution

IMEC, Leuven, Belgium

Volume

23

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

173

Lastpage

175

Abstract

Thick Cu single damascene inductors are integrated on top of a standard aluminum three-levels-of-metal (3LM) back-end of line (BEOL) silicon process. The obtained Q factors are more than four times higher than Q factors of the inductors of the same geometry processed in the Al 3LM BEOL. For an inductor of 3 nH designed for 2-GHz frequency applications and fabricated in thick Cu/SiLK/sup TM1/ as an add-on module, a Q factor of /spl sim/24 is reached. A compact two-section lumped element SPICE model is proposed and validated for both inductors in thick Cu/SiLK/sup TM/ and inductors in standard aluminum 3LM BEOL.

Keywords

Q-factor; SPICE; UHF integrated circuits; copper; inductors; integrated circuit design; integrated circuit metallisation; integrated circuit modelling; modules; 2 GHz; 2-GHz frequency applications; Cu-Al; Q factor; RF circuit design; RFIC; add-on Cu/SiLK module; add-on module; back-end of line process; deep sub-micron digital CMOS processing; high Q inductors; radio-frequency components; thick Cu single damascene inductors; three-levels-of-metal BEOL silicon process; two-section lumped element SPICE model; Aluminum; BiCMOS integrated circuits; CMOS technology; Copper; Inductors; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Silicon; Spirals;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.992828

Filename

992828