Title :
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
Author :
Chen, S.B. ; Lai, C.H. ; Chin, A. ; Hsieh, J.C. ; Liu, J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2002 12:00:00 AM
Abstract :
We have investigated the electrical characteristics of Al2O3 and AlTiO/sub x/ MIM capacitors from the IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiO/sub x/ MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiO/sub x/ MIM capacitor has very large capacitance reduction at increasing frequencies. In contrast, good device integrity has been obtained for the Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
Keywords :
MIM devices; MMIC; S-parameters; alumina; aluminium compounds; capacitance; capacitors; dielectric losses; leakage currents; permittivity; reliability; 100 kHz to 20 GHz; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ dielectrics; AlTiO/sub x/; AlTiO/sub x/ dielectrics; IF to RF frequency range; RFICs; S-parameters; VLSI backend integration; capacitance density; capacitance reduction; device integrity; dielectric constant; electrical characteristics; frequency dependence; high-density MIM capacitors; leakage current; loss tangent; reliability; temperature coefficient; Capacitance; Dielectrics; Electrical resistance measurement; Frequency dependence; Leakage current; MIM capacitors; Radio frequency; Transmission line matrix methods; Transmission line measurements; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
