Title :
Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
Author :
Chen, S.B. ; Lai, C.H. ; Chan, K.T. ; Chin, Albert ; Hsieh, J.C. ; Liu, J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2002 12:00:00 AM
Abstract :
We have characterized the capacitance and loss tangent for high-k Al/sub 2/O/sub 3/ and AlTiO/sub x/ gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO/sub 2/ was demonstrated individually by the proposed Al/sub 2/O/sub 3/ and AlTiO/sub x/ gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO/sub 2/ from 100 KHz to 20 GHz. These results suggest that both Al/sub 2/O/sub 3/ and AlTiO/sub x/ are suitable for next generation MOSFET application into RF frequency regime.
Keywords :
MOS capacitors; MOSFET; S-parameters; alumina; aluminium compounds; capacitance; dielectric losses; dielectric thin films; microwave field effect transistors; permittivity; 100 kHz to 20 GHz; Al/sub 2/O/sub 3/; AlTiO/sub x/; IF to RF frequency range; MOS capacitors; RF frequency regime; Si; dielectric constant; frequency-dependent capacitance reduction; high-k Al/sub 2/O/sub 3/ gate dielectrics; high-k AlTiO/sub x/ gate dielectrics; loss tangent; next generation MOSFET; scattering parameters; Capacitance measurement; Capacitors; Coplanar transmission lines; Dielectric losses; Frequency measurement; High K dielectric materials; High-K gate dielectrics; Radio frequency; Transmission line matrix methods; Transmission line measurements;
Journal_Title :
Electron Device Letters, IEEE
