Multigigahertz CMOS dual-modulus prescaler IC

Author

Cong, Hong-Ih ; Andrews, John M. ; Boulin, David M. ; Fang, San-Chin ; Hillenius, Steven J. ; Michejda, John A.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

23

Issue

5

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1189

Lastpage

1194

Abstract

A low-power CMOS dual-modulus (divide-by-128/129) prescaler IC is described. The IC has been fabricated with symmetric CMOS technology that optimizes simultaneously the characteristics of both the p-channel and n-channel transistors for low-power-supply-voltage operation. Two different gate oxide thicknesses of 175 and 100 Å have been used. The best prescalar fabricated with 175-Å gate oxide functions at 2.06 GHz with 25-m W power consumption (L_eff=0.5 μm; V_dd=3.5 V). Preliminary results for prescalars fabricated with 100-Å gate oxide show that 4.2-GHz operation is possible (L_eff=0.4 μm; V _dd=3.5 V). Power-supply voltage as low as 1.7 V can be used for the prescalar to function at 1 GHz with a power consumption of only 4 mW

Keywords

CMOS integrated circuits; digital integrated circuits; scaling circuits; 1.7 V; 100 A; 175 A; 2.06 GHz; 25 mW; 4 mW; 4.2 GHz; CMOS dual-modulus prescaler IC; gate oxide thicknesses; low-power-supply-voltage operation; power consumption; symmetric CMOS technology; CMOS integrated circuits; CMOS technology; Circuit synthesis; Counting circuits; Energy consumption; Flip-flops; Frequency; Gallium arsenide; Integrated circuit technology; Power supplies;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.5943

Filename

5943