Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs

Author

Cheng, Yuhua ; Matloubian, Mishel

Author_Institution

Conexant Syst., Newport Beach, CA, USA

Volume

23

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

221

Lastpage

223

Abstract

Parameter extraction of the substrate resistance, which becomes important in radio frequency (RF) and mixed signal integrated circuit (IC) design, is discussed based on a simple substrate network of lumped components. By using the measured HF s-parameter data from a set of devices with different geometries, the scaleable parameters for substrate resistances components can be obtained. The simple substrate model with extracted scaleable parameters is accurate for devices with different widths and fingers in a frequency range up to 10 GHz.

Keywords

MOSFET; S-parameters; lumped parameter networks; microwave field effect transistors; parameter estimation; semiconductor device models; 10 GHz; HF s-parameter data; RF IC design; RF MOSFET modeling; RF MOSFETs; lumped component substrate network; mixed signal integrated circuit design; parameter extraction; scaleable substrate resistance components; simple substrate model; substrate resistance; Computational geometry; Electrical resistance measurement; Hafnium; Integrated circuit measurements; Mixed analog digital integrated circuits; Parameter extraction; Radio frequency; Radiofrequency integrated circuits; Scattering parameters; Signal design;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.992845

Filename

992845