Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs

Parameter extraction of the substrate resistance, which becomes important in radio frequency (RF) and mixed signal integrated circuit (IC) design, is discussed based on a simple substrate network of lumped components. By using the measured HF s-parameter data from a set of devices with different geometries, the scaleable parameters for substrate resistances components can be obtained. The simple substrate model with extracted scaleable parameters is accurate for devices with different widths and fingers in a frequency range up to 10 GHz.