Title :
Microwave performance of pulse-doped-heterostructure GaInAs MESFETs
Author :
Fathimulla, A. ; Hier, H. ; Abrahams, J.
Author_Institution :
Allied/Bendix Aerospace Technol. Center, Columbia, MD
fDate :
1/21/1988 12:00:00 AM
Abstract :
A pulse-doped-heterostructure GaInAs MESFET having a 0.7 μm gate length with a transconductance of 270 mS/mm has been fabricated. Maximum stable gains of 14 dB at 26.5 GHz, which extrapolates to an fmax of over 100 GHz, were measured
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 0.5 to 100 GHz; 0.7 micron; 14 dB; 26.5 GHz; 270 mS; EHF; GaInAs-AlInAs; III-V semiconductors; MESFET; SHF; microwave devices; pulse-doped-heterostructure; stable gains; submicron gate length; transconductance;
Journal_Title :
Electronics Letters
