Title :
Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design
Author :
Zampardi, Peter J. ; Chang, C.E. ; Fitzsimmons, S. ; Pierson, R.L. ; McDermott, B.T. ; Chen, P.F. ; Asbeck, Peter
Author_Institution :
Rockwell Sci. Center, Thousand Oaks, CA, USA
fDate :
4/1/2002 12:00:00 AM
Abstract :
We have demonstrated a heterojunction bipolar transistor using a novel compound collector (CCHBT) design that allows a low-knee voltage and high-breakdown voltage to be obtained simultaneously. The novel aspect of this design is to use a short wide band-gap collector only over a narrow portion of the collector, where the field is highest. This allows support of high fields while maintaining a low overall collector resistance due to the higher mobility of the narrow band-gap material. We demonstrate an offset voltage reduction of about 35% and a knee-voltage reduction of 30%, while increasing both BVCEO and BVCBO by 20 and 27%, respectively, compared to a single heterojunction device of the same collector length
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; GaInP; GaInP double heterojunction bipolar transistor; breakdown voltage; compound collector design; knee voltage; offset voltage; Bipolar transistors; Breakdown voltage; Double heterojunction bipolar transistors; Electron mobility; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Knee; Low voltage; Photonic band gap;
Journal_Title :
Electron Devices, IEEE Transactions on
