Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design

Author

Zampardi, Peter J. ; Chang, C.E. ; Fitzsimmons, S. ; Pierson, R.L. ; McDermott, B.T. ; Chen, P.F. ; Asbeck, Peter

Author_Institution

Rockwell Sci. Center, Thousand Oaks, CA, USA

Volume

49

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

540

Lastpage

543

Abstract

We have demonstrated a heterojunction bipolar transistor using a novel compound collector (CCHBT) design that allows a low-knee voltage and high-breakdown voltage to be obtained simultaneously. The novel aspect of this design is to use a short wide band-gap collector only over a narrow portion of the collector, where the field is highest. This allows support of high fields while maintaining a low overall collector resistance due to the higher mobility of the narrow band-gap material. We demonstrate an offset voltage reduction of about 35% and a knee-voltage reduction of 30%, while increasing both BVCEO and BVCBO by 20 and 27%, respectively, compared to a single heterojunction device of the same collector length

Keywords

III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; GaInP; GaInP double heterojunction bipolar transistor; breakdown voltage; compound collector design; knee voltage; offset voltage; Bipolar transistors; Breakdown voltage; Double heterojunction bipolar transistors; Electron mobility; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Knee; Low voltage; Photonic band gap;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.992859

Filename

992859