Characterization of the novel polysilicon TFT with a subgate coupling structure

Author

Chang, Kow Ming ; Chung, Yuan Hung ; Deng, Chi-Gun ; Chung, Yuan Fu ; Lin, Jian-Hong

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

49

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

564

Lastpage

567

Abstract

Proposed and fabricated a novel polysilicon thin film transistor (poly-Si TFT) with a subgate coupling structure that behaves as an offset gated structure in the OFF state while acting as a conventional nonoffset structure in the ON state. The OFF state leakage current of the new TFT is two orders of magnitude lower than that of the conventional nonoffset TFT, while the ON current of the new TFT is one order of magnitude higher than that of the offset TFT and is almost identical to that of the conventional non-offset TFT. The ON/OFF current ratio of the new TFT is greatly improved by two orders of magnitude. No additional photo-masking steps are required to fabricate the subgate of the new TFT and its fabrication process is fully the same as the conventional nonoffset TFTs

Keywords

characteristics measurement; elemental semiconductors; leakage currents; masks; semiconductor device measurement; silicon; thin film transistors; ON current; Si; fabrication process; leakage current; nonoffset structure; offset gated structure; photo-masking steps; polysilicon TFT; subgate coupling structure; Active matrix liquid crystal displays; Annealing; Degradation; Electrons; Fabrication; Grain boundaries; Leakage current; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.992863

Filename

992863