DocumentCode
1266663
Title
Floating-island TFT leakage caused by process step reduction
Author
Tsujimura, Takatoshi ; Tokuhiro, Osamu ; Morooka, Mitsuo ; Miyamoto, Takashi ; Miwa, Kohichi ; Yoshimura, Yuhsuke ; Andry, Paul ; Libsch, Frank
Author_Institution
LCD Tech. Dev., IBM Japan, Kanagawa, Japan
Volume
49
Issue
4
fYear
2002
fDate
4/1/2002 12:00:00 AM
Firstpage
576
Lastpage
583
Abstract
The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease
Keywords
leakage currents; liquid crystal displays; semiconductor technology; thin film transistors; OFF channel lengths; ON channel lengths; T-shaped TFT structure; XGA TFT LCD panel; floating-island TFT leakage; high-contrast liquid crystal display; leakage mechanism; process step reduction; thin-film transistor; top-gate TFT; Cathode ray tubes; Computer displays; Costs; Electrodes; Etching; Fabrication; Insulation; Liquid crystal displays; Resists; Thin film transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.992865
Filename
992865
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