• DocumentCode
    1266683
  • Title

    Technology and reliability constrained future copper interconnects. II. Performance implications

  • Author

    Kapur, Pawan ; Chandra, Gaurav ; McVittie, James P. ; Saraswat, Krishna C.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA, USA
  • Volume
    49
  • Issue
    4
  • fYear
    2002
  • fDate
    4/1/2002 12:00:00 AM
  • Firstpage
    598
  • Lastpage
    604
  • Abstract
    For pt. I see ibid., vol.49, no.4, pp.590-7 (2002). This work extends the realistic resistance modeling of on-chip copper interconnects to assess its impact on key interconnect performance metrics. As quantified in part I of this work, the effective resistivity of copper is not only significantly larger than its ideal, bulk value but also highly dependent on technology and reliability constraints. Performance is quantified under various technological conditions in the future. In particular, wire delay is extensively addressed. Further, the impact of optimal repeater insertion to improve these parameters is also studied using realistic resistance trends. The impact of technologically constrained resistance on power penalty arising from repeater insertion is briefly addressed. Where relevant, aforementioned results are contrasted with those obtained using ideal copper resistivity
  • Keywords
    copper; crosstalk; delays; electrical resistivity; inductance; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; repeaters; technological forecasting; Cu; Cu interconnects; crosstalk; effective resistivity; future performance; interconnect latency; interconnect performance metrics; interconnect resistance model; optimal repeater insertion; power consumption; power penalty; reliability constraints; repeater power; resistance modeling; signal transmission reliability; technological conditions; technology constraints; wire delay; wire inductance; Added delay; Capacitance; Conductivity; Copper; Dielectric materials; Inductance; Measurement; Repeaters; Transistors; Wire;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.992868
  • Filename
    992868