SiC power Schottky and PiN diodes

Author

Singh, Ranbir ; Cooper, James A., Jr. ; Melloch, Michael R. ; Chow, T.P. ; Palmour, John W.

Author_Institution

Cree Inc., Durham, NC, USA

Volume

49

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

665

Lastpage

672

Abstract

The present state of SiC power Schottky and PiN diodes are presented in this paper. The design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV Schottky diode, and an 8.6 kV 4H-SiC PiN diode, which are considered to be significant milestones in the development of high power SiC diodes, are described in detail. Design guidelines and practical issues for the realization of high-power SiC Schottky and PiN diodes are also presented. Experimental results on edge termination techniques applied to newly developed, extremely thick (e.g., 85 and 100 μm) 4H-SiC epitaxial layers show promising results. Switching and high-temperature measurements prove that SiC power diodes offer extremely low loss alternatives to conventional technologies and show the promise of demonstrating efficient power circuits. At sufficiently high on-state current densities, the on-state voltage drop of Schottky and PiN diodes have been shown to be comparable to those offered by conventional technologies

Keywords

Schottky diodes; current density; high-temperature electronics; p-i-n diodes; power semiconductor diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 1200 V; 130 A; 1700 V; 4.9 to 8.6 kV; 4H-SiC epitaxial layers; 85 to 100 micron; SiC; SiC power PIN diodes; SiC power Schottky diodes; design guidelines; device characterization; device fabrication; edge termination techniques; high power SiC diodes; high temperature operation; high-temperature measurements; low loss; on-resistance; on-state voltage drop; p-i-n rectifiers; reverse recovery; switching measurements; Current density; Epitaxial layers; Fabrication; Guidelines; Loss measurement; Power measurement; Schottky diodes; Silicon carbide; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.992877

Filename

992877