Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Author

Fiorenza, James G. ; del Alamo, Jesús A.

Author_Institution

Microsystems Technol. Lab., MIT, Cambridge, MA, USA

Volume

49

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

687

Lastpage

692

Abstract

Simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage (I-V), capacitance-voltage (C-V), S-parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses

Keywords

S-parameters; UHF field effect transistors; characteristics measurement; losses; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device breakdown; semiconductor device measurement; silicon-on-insulator; 0 to 6 GHz; 1.9 GHz; DC current-voltage characteristics; RF power LDMOSFETs; S-parameter characteristics; Si; body resistance; bulk silicon wafers; capacitance-voltage characteristics; load-pull characteristics; on-state breakdown voltage; parasitic pad losses; power-added efficiency; thin-film SOI; CMOS technology; Capacitance; Fabrication; Radio frequency; Radiofrequency amplifiers; Semiconductor thin films; Silicon on insulator technology; Substrates; Telephone sets; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.992880

Filename

992880