Title :
Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve
Author :
Chen, C.H. ; Fang, Y.K. ; Yang, C.W. ; Ting, S.-F. ; Tsair, Y.S. ; Wang, M.F. ; Yao, L.G. ; Chen, S.C. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/2002 12:00:00 AM
Abstract :
In this letter, a novel and simple method to determine deep ultrathin oxide thickness by measuring the MOS capacitance under the flat-band condition is reported. The mechanism of this method has been profoundly studied. The results determined by this method show good agreement with those using capacitance-voltage (C-V) simulation, ellipsometer, and high-resolution transmission electromicroscopy (HRTM) analysis for thin oxides (2~3 nm). The thickness of pure oxide extracted by this method in this experiment can be down to 1.4 nm despite the obvious C-V distortion
Keywords :
MIS devices; capacitance measurement; ellipsometry; semiconductor device measurement; thickness measurement; transmission electron microscopy; MOS device; deep ultrathin equivalent oxide thickness measurement; ellipsometry; flat-band capacitance-voltage curve; high-resolution transmission electron microscopy; Boundary conditions; Capacitance-voltage characteristics; MOSFET circuits; Quantum capacitance; Solid state circuits; Thickness measurement; Tunneling; Ultra large scale integration; Voltage; Wave functions;
Journal_Title :
Electron Devices, IEEE Transactions on
