Title :
On the transport equations in popular commercial device simulators
Author :
Levinshtein, M.E. ; Mnatsakanov, T.T.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
4/1/2002 12:00:00 AM
Abstract :
The transport formulation used in many commercial semiconductor device simulators (for example DESSIS, ATLAS, and MEDICI) does not allow accurate modeling of electron-hole scattering in bipolar semiconductor devices such as diodes, bipolar junction transistors, and thyristors. This is especially important at low temperatures and/or high current densities
Keywords :
bipolar transistors; current density; digital simulation; minority carriers; semiconductor device models; semiconductor diodes; thyristors; ATLAS; DESSIS; MEDICI; bipolar junction transistors; bipolar semiconductor devices; commercial semiconductor device simulators; current densities; diodes; electron-hole scattering; thyristors; transport equations; Charge carrier processes; Current density; Equations; Insulated gate bipolar transistors; Medical simulation; Scattering; Semiconductor devices; Semiconductor diodes; Temperature; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
