Title :
Drain-Induced Barrier Lowering in Short-Channel Poly-Si TFT After Off-Bias Stress Using Metal-Induced Crystallization of Amorphous Silicon
Author :
Lee, Ung Gi ; Jang, Jin
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Abstract :
We report the effect of off-bias stress on the transfer characteristics of short-channel (L = 0.95 μm) low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si TFT using metal-mediated crystallization of a-Si exhibited a field-effect mobility of 93.07 cm2/V·s . In addition to the reduction of off-state leakage currents, threshold voltage shifts of 2.28 and 3.45 V were observed after off-bias stress at the drain voltages of -0.1 V and - 1 V, respectively. This is attributed to the reduction of the effective channel length and to drain-induced barrier lowering effect, which lead to different current-voltage characteristics when the source/drain electrodes are exchanged.
Keywords :
amorphous semiconductors; crystallisation; field effect transistors; leakage currents; silicon; thin film transistors; amorphous silicon; current-voltage characteristics; drain electrode; drain-induced barrier; field-effect mobility; metal-induced crystallization; metal-mediated crystallization; off-bias stress; off-state leakage current reduction; short-channel polycrystalline silicon TFT; size 0.95 mum; source electrode; thin-film transistor; transfer characteristics; voltage -0.1 V; voltage -1 V; voltage 2.28 V; voltage 3.45 V; Electron traps; Leakage current; Logic gates; Silicon; Stress; Thin film transistors; Drain-induced barrier lowering (DIBL); off-state currents; polycrystalline silicon (poly-Si); thin-film transistors (TFTs); transfer and output characteristics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2159475
