Title :
Design of a 50-Gb/s SOI-Based DPSK Demodulator for Dense Photonic Integration
Author :
Hai, Mohammed Shafiqul ; Liboiron-Ladouceur, Odile
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
A silicon-on-insulator (SOI)-based Mach-Zehnder delay interferometer fabricated in a 220-nm height and 500-nm width SOI strip waveguide technology is presented. The delay line length of 20 ps in the interferometer is optimized to a data rate of 50 Gb/s. The measured insertion loss of the device is 16 dB, including the facet losses. At the output of the demodulator, an approximately 20-dB extinction ratio is achieved. Low bit error rate (BER) measurement (10-9) is reached for a demodulated signal with an optical-signal-to-noise ratio of 15.8 dB at the photodetector. Error-free performance (BER<; 10-9) of the SOI-based DPSK demodulator is experimentally demonstrated at 50 Gb/s.
Keywords :
demodulators; differential phase shift keying; error statistics; interferometers; silicon-on-insulator; BER measurement; SOI strip waveguide technology; SOI-based DPSK demodulator; bit error rate measurement; bit rate 50 Gbit/s; dense photonic integration; error-free performance; optical-signal-to-noise ratio; photodetector; silicon-on-insulator-based Mach-Zehnder delay interferometer; size 220 nm; size 500 nm; Adaptive optics; Delay; Demodulation; Differential phase shift keying; Optical device fabrication; Optical sensors; Optical waveguides; Bit error rate (BER); differential phase shift keying (DPSK); integrated optics; silicon-on-insulator (SOI) technology;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2214028