Title :
Intentional Distortion of Transistor Shape to Improve Circuit Performance
Author :
Moroz, Victor ; Choi, Munkang ; Lin, Xi-Wei
Author_Institution :
Synopsys, Inc., Mountain View, CA, USA
Abstract :
A mixed-mode 3-D simulation study has been performed for ring oscillators made of 30-nm planar CMOS transistors with nonrectangular channel shapes. Nonrectangular shapes happen unintentionally due to optical proximity effects and can also be introduced intentionally. Transistors with large drains are shown to degrade ring-oscillator performance, whereas transistors with large sources are shown to simultaneously increase the ring-oscillator frequency by 25% and reduce the leakage current by a factor of three.
Keywords :
CMOS integrated circuits; leakage currents; oscillators; proximity effect (lithography); transistors; CMOS transistors; circuit performance; intentional distortion; leakage current; mixed-mode 3D simulation study; nonrectangular channel shapes; optical proximity effects; ring oscillators; transistor shape; 3-D simulation; Layout optimization; nonrectangular transistor; ring-oscillator benchmarking;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2034758
