Mechanism Investigation of p-i-n ZnO-Based Light-Emitting Diodes

Author

Lee, Ching-Ting ; Lin, Yung-Hao ; Lai, Li-Wen ; Lou, Li-Ren

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

22

Issue

1

fYear

2010

Firstpage

30

Lastpage

32

Abstract

Using a cosputtering technique to deposit P-ZnO : AlN film and using a vapor cooling condensation system to deposit n-ZnO : In and i-ZnO films on sapphire substrates, thin-film-type ZnO-based light-emitting diodes (LEDs) were fabricated. A Nd : YAG laser with a wavelength of 413 nm is utilized to identify the defect-related emissions of p-ZnO, i-ZnO, and n-ZnO films. The characteristics of i-ZnO layer of ultraviolet (UV) emissions were analyzed using temperature-dependent photoluminescence. The mechanism of the UV electroluminescence emission peak at 3.20 eV observed from the p-i-n ZnO-based LEDs were attributed to the low deep-level defects and the radiative recombination occurred in the i-ZnO layer.

Keywords

II-VI semiconductors; aluminium compounds; deep levels; electroluminescent devices; flaw detection; light emitting diodes; p-i-n diodes; photoluminescence; wide band gap semiconductors; zinc compounds; Al₂O₃; LED; UV electroluminescence; YAG:Nd; ZnO; ZnO:AlN; ZnO:In; cosputtering; deep-level defects; electron volt energy 3.2 eV; light-emitting diodes; p-i-n diodes; photoluminescence; radiative recombination; vapor cooling condensation; wavelength 413 nm; Cosputtering; vapor cooling condensation system; zinc oxide (ZnO) light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2035521

Filename

5313901