Title :
High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology
Author :
Crupi, Giovanni ; Schreurs, Dominique M M -P ; Caddemi, Alina ; Raffo, Antonio ; Vanaverbeke, Frederik ; Avolio, Gustavo ; Vannini, Giorgio ; De Raedt, Walter
Author_Institution :
DFMIE, Univ. of Messina, Messina, Italy
Abstract :
A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances.
Keywords :
III-V semiconductors; capacitance; gallium compounds; high electron mobility transistors; impedance matching; mathematical analysis; wide band gap semiconductors; GaN; HEMT technology; experimental observation; extraction methodology; extrinsic capacitances; high-frequency extraction; impedance parameters; intrinsic capacitance; mathematical analysis; Capacitance; Equivalent circuits; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Extrinsic capacitances; GaN HEMT; modeling;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2160525
