Title :
Monolithic integration of an InP/InGaAs four-channel transimpedance optical receiver array
Author :
Lee, W.S. ; Spear, D.A.H. ; Dawe, P.J.G. ; Bland, S.W.
Author_Institution :
STC Technol. Ltd., Harlow, UK
Abstract :
Fully functional four-channel transimpedance receiver array OEICs have been fabricated on 2" diameter InP substrates. Each receiver channel has a bandwidth of 200 MHz and an average input equivalent noise current of around 6 pA/ square root (Hz). The array chip is 3.7 mm*3.2 mm in size and contains 88 components. This is believed to represent the highest level of optoelectronic integration yet reported on InP.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; receivers; 200 MHz; InGaAs-InP; InP; OEICs; average input equivalent noise current; four-channel transimpedance optical receiver array; optoelectronic integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901179
