Title :
Manufacturing of solder bumps with Cu/Ta/Cu as under bump metallurgy
Author :
Lin, Kwang-Lung ; Liu, Ya-Te
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
11/1/1999 12:00:00 AM
Abstract :
This study investigated the feasibility of the multilayer Cu/Ta/Cu under bump metallurgy (UBM), deposited on AlN/Si where AlN is a thin film. An interdiffusion study found that Ta is an appropriate diffusion barrier layer for the investigated solder bump structure. The temperature profiles and the flux compositions for solder reflow were also investigated. The flux activators investigated include succinic acid, adipic acid, stearic acid, dimethylamine hydrochloride, and diethylamine hydrochloride. Among these, succinic acid was the most appropriate in terms of wetting and cleaning
Keywords :
aluminium compounds; chemical interdiffusion; copper; diffusion barriers; electroplating; flip-chip devices; reflow soldering; silicon; sputter deposition; surface cleaning; tantalum; wetting; Cu-Ta-Cu-AlN-Si; adipic acid; cleaning; diethylamine hydrochloride; diffusion barrier layer; dimethylamine hydrochloride; flux activators; flux compositions; interdiffusion study; solder bumps; stearic acid; succinic acid; temperature profiles; under bump metallurgy; wetting; Conducting materials; Conductive films; Flip chip; Manufacturing; Passivation; Semiconductor thin films; Sputtering; Substrates; Temperature distribution; Thermal conductivity;
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/6040.803449
